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Author Andriesei, C. ♦ Temcamani, F.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Logic gates ♦ Noise ♦ Impedance matching ♦ Noise figure ♦ Radio frequency ♦ Resistance ♦ Low-noise amplifiers ♦ RF ♦ common gate amplifier ♦ CMOS ♦ impedance matching ♦ low noise amplifier
Abstract The gate and bulk resistances influence on the impedance matching in case of MOSFET common gate amplifiers is investigated. It is shown that using a supplementary resistance of maximum 100Ω, S becomes less than −15 dB over a wide frequency range, therefore making the circuit suitable for low power wideband RF applications and less sensitive to the loading capacitor value, at the price of a supplementary noise. The simulations were carried out in 0.35μm AMS CMOS process.
Description Author affiliation: “Gheorghe Asachi” Technical University, Iaşi, Romania (Andriesei, C.) || ETIS Laboratory, ENSEA, Cergy, France (Temcamani, F.)
ISBN 9781612841731
ISSN 1545827X
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-10-17
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781612841724
Size (in Bytes) 250.27 kB
Page Count 4
Starting Page 391
Ending Page 394


Source: IEEE Xplore Digital Library