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Author Halmagean, E. ♦ Birau, O. ♦ Ciuhandu, A. ♦ Udrea-Spenea, M.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1990
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Neutrons ♦ X-ray diffraction ♦ X-ray imaging ♦ Surfaces ♦ Silicon ♦ Inductors ♦ Lattices ♦ Optical imaging ♦ Annealing ♦ Electronic components
Abstract Clusters induced as effects of exposing silicon single-crystals in fast neutron reactor ambiant are studied as a damage phenomenon used in inducing well controlled and reproducible effects to be used in semiconductor materials and device technology. Single-silicon-crystal X-ray diffraction has become a well-established branch of X-ray crystallography. Widely used as a method of investigation of bulk structural properties, it can also be used as a powerful tool in revealing by visualization silicon crystal lattice defects such as fast neutron reactor irradiation induced clusters. This paper is an original contribution in this field using X-ray topography as an investigation tool.
Description Author affiliation: Res. Inst. for Electron. Components, Bucharest, Romania (Halmagean, E.)
ISBN 0780326474
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1995-10-11
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 442.19 kB
Page Count 4
Starting Page 195
Ending Page 198

Source: IEEE Xplore Digital Library