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Author Basa, P. ♦ Petrik, P.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2005
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon compounds ♦ Nonhomogeneous media ♦ Annealing ♦ Nanocrystals ♦ Ellipsometry ♦ Dielectric materials ♦ Chemicals ♦ Dielectric substrates ♦ Temperature distribution ♦ Spectroscopy
Abstract Low pressure chemical vapour deposited and annealed $SiN_{x}/nc-Si/SiN_{x}$ layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. A significant effect of the deposition time and annealing process was obtained
Description Author affiliation: Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest (Basa, P.; Petrik, P.)
ISBN 0780392140
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2005-10-03
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 799.14 kB
Page Count 4
Starting Page 417
Ending Page 420

Source: IEEE Xplore Digital Library