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Author Fonseca, J. ♦ Kaya, S.
Sponsorship IEEE ♦ Electron Device Soc. ♦ Nat. Sci. Found. ♦ Army Research Laboratory ♦ Naval Research Laboratory ♦ Army Research Office ♦ Nat. Inst. of Standards and Technol. ♦ Elec. and Comput. Eng. Dept., Univ. of Maryland
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Green's function methods ♦ MOSFETs ♦ Nanoscale devices ♦ Fluctuations ♦ Scattering ♦ Tunneling ♦ Quantization ♦ Electrons ♦ Substrates ♦ Silicon
Abstract The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green's function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.
Description Author affiliation: Ohio Univ., Athens, OH, USA (Fonseca, J.; Kaya, S.)
ISBN 0780381394
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-12-10
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 130.64 kB
Page Count 2
Starting Page 512
Ending Page 513

Source: IEEE Xplore Digital Library