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Author Nawaz, M. ♦ Nan Chen
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Temperature measurement ♦ Device Testing ♦ MOSFET ♦ Temperature ♦ Silicon carbide ♦ Power modules ♦ Multichip modules ♦ Logic gates ♦ SiC-MOSFET ♦ Switching circuits ♦ SiC Devices ♦ Device Characterization
Abstract Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature are key requirement parameters, such as converter valve in HVDC and FACTS systems. What is also critical is the short circuit performance (i.e., short circuit withstand capability) in the practical high power application for fault mode protection. This paper deals with static and dynamic measurements performed for SiC based commercial MOSFETs power modules. First dynamic tests using single pulse test setup has been performed with commercial gate drive unit. Results from engineering samples show overall good confidence level. Furthermore, no reverse recovery in the SiC diode is observed. A short circuit analysis in hard switched fault (HSF) mode at 800 V and 600 V showed a short circuit survivability time of over 10 μs for SiC power modules.
Description Author affiliation: Corp. Res., ABB, Vasteras, Sweden (Nawaz, M.; Nan Chen)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-09-08
Publisher Place Switzerland
Rights Holder EPE Association and IEEE
e-ISBN 9789075815221
Size (in Bytes) 2.12 MB
Page Count 9
Starting Page 1
Ending Page 9


Source: IEEE Xplore Digital Library