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Author Sagawa, M. ♦ Toyonaka, T. ♦ Hiramoto, K. ♦ Shinoda, K. ♦ Uomi, K.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1994
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Power generation ♦ Temperature ♦ Gallium arsenide ♦ Power lasers ♦ Indium gallium arsenide ♦ Fiber lasers ♦ Quantum well lasers ♦ Waveguide lasers ♦ Optical waveguides ♦ Laboratories
Abstract In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures.
Description Author affiliation: Central Res. Lab., Hitachi Ltd., Kokubunji, Japan (Sagawa, M.)
ISBN 0780317548
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1994-09-19
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 192.94 kB
Page Count 2
Starting Page 255
Ending Page 256


Source: IEEE Xplore Digital Library