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Author Baumann, M. ♦ Ruther, P. ♦ Paul, O.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2010
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon ♦ Sensitivity ♦ Substrates ♦ Stress ♦ CMOS integrated circuits ♦ Bridge circuits ♦ Pressure measurement
Abstract This paper reports on the development and characterization of a novel CMOS-based, low-cost, high-pressure sensor with inherent overload protection. The sensor consists of an anodically bonded silicon-Pyrex stack with surface trenches micromachined into the CMOS substrate. Due to the difference in elastic moduli of silicon and Pyrex, an applied hydrostatic pressure causes an anisotropic stress distribution in the chip area between the trenches. The induced stress is measured using n-doped piezoresistors arranged in a Wheatstone bridge configuration placed between the trenches. Pressure sensors of this type realized using an industrial 0.45-µm CMOS process in combination with post-CMOS processing have been characterized up to 60 bar and show a sensitivity of 44.1 µV/V/bar.
Description Author affiliation: Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany (Baumann, M.; Ruther, P.; Paul, O.)
ISBN 9781424481705
ISSN 19300395
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-11-01
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781424481699
Size (in Bytes) 829.21 kB
Page Count 4
Starting Page 2644
Ending Page 2647

Source: IEEE Xplore Digital Library