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Author Ivan, I.A. ♦ Agnus, J. ♦ Rakotondrabe, M. ♦ Lutz, P. ♦ Chaillet, N.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon ♦ Actuators ♦ Piezoelectric materials ♦ Bonding ♦ Hysteresis ♦ Etching ♦ ENERGY HARVESTING ♦ MEMS ♦ PEZO-MEMS ♦ PIEZOELECTRIC MATERIALS PMN-PT ♦ PZT ♦ MICRO-ACTUATORS
Abstract Most of the actual MEMS (Micro-ElectroMechanical Systems) are Silicon capacitive devices. The reported research provides the means for approaching towards novel concepts combining silicon technology with piezoelectric materials into Piezo-MEMS systems. The presented technology is based on the bonding and patterning of bulk PMN-PT piezoelectric material on a Silicon wafer rather than sputtering thin piezoelectric films (a complementary method generally providing worse piezoelectric propertie)s. On the other hand bulk piezoelectric materials are more suited for micromanipulation actuators or energy harvesters. The advantage of PMN-PT piezoelectric material with respect to the classical PZT ceramics is presented in the context of the latest works. The technology and some results for actuation and energy harvesting are depicted in the paper.
Description Author affiliation: Valahia University of Targoviste, Electr. Eng. Fac. B-Dul Unirii 18-20, Targoviste 130082, Romania (Ivan, I.A.) || FEMTO-ST Institute, AS2M Dpt., 24 Rue Alain Savary, 25000 Besançon, France (Agnus, J.; Rakotondrabe, M.; Lutz, P.; Chaillet, N.)
ISBN 9781612841731
ISSN 1545827X
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-10-17
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781612841724
Size (in Bytes) 1.05 MB
Page Count 4
Starting Page 149
Ending Page 152

Source: IEEE Xplore Digital Library