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Author Walthes, W. ♦ Pascht, A. ♦ Berroth, A.
Sponsorship IEEE
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Radio frequency ♦ Power transistors ♦ Circuit noise ♦ CMOS technology ♦ Equivalent circuits ♦ Low-noise amplifiers ♦ Radiofrequency amplifiers ♦ MOSFET circuits ♦ Electrical resistance measurement ♦ Frequency measurement
Abstract The advances in CMOS process technology enables the design of analog high frequency circuits for mobile communication products. Low noise amplifiers as well as power amplifiers are required in the RF front end. This work presents a complete and consistent characterisation procedure for power transistors of a standard 0.35 /spl mu/m CMOS technology. With the developed tools for small signal, large signal and noise modelling a full characterisation of the transistor is achieved.
ISBN 0780374320
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-12-05
Publisher Place USA
Rights Holder ISDRS-Univ of Maryland
Size (in Bytes) 175.10 kB
Page Count 4
Starting Page 605
Ending Page 608


Source: IEEE Xplore Digital Library