Thumbnail
Access Restriction
Subscribed

Author Abdullah, I. ♦ Ismail, R. ♦ Jalar, A.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2014
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Strain ♦ Wires ♦ Metals ♦ Stress ♦ Microstructure ♦ Grain boundaries ♦ strain rate ♦ SnAgCu ♦ nanoindentation ♦ dislocation ♦ P-h curve ♦ pop-in event
Abstract Dislocation behavior was occurs when an eutectic solder alloy of SnAgCu experiencing different strain at room temperature that require the further analysis in order to relate the physical and microstructure changes towards the mechanical performance of lead free solder. In this study, nanoindentation technique was applied to determine the hardness and modulus on six variant of strain (0.00015 $mms^{-1},$ 0.0015 $mms^{-1},$ 0.015 $mms^{-1},$ 0.15 $mms^{-1},$ 1.5 $mms^{-1}$ and 15 $mms^{-1})$ after tensile test. The P-h curves and the micromechanical parameter namely hardness and residual modulus through nanoindentation test were conducted. The analysis were obtained strain rate sensitivity (m) and stress exponent (n) from dwell time in order to determine the mechanism of grains. The P-h curve result showed the pop-in event at the ranges of 100 nm to 300 nm. The micromechanical properties were show the increment of values at high strain rates. The dominated discontinuity local will occurrence the pop-in event and will activating dislocation distribution.
Description Author affiliation: Inst. of Micro Eng. & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia (Abdullah, I.; Ismail, R.; Jalar, A.)
ISBN 9781479957606
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-08-27
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 1.20 MB
Page Count 4
Starting Page 343
Ending Page 346


Source: IEEE Xplore Digital Library