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Author Ghosh, A. ♦ Bannerjee, R. ♦ Majumder, S.B.
Sponsorship IEEE
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Zinc oxide ♦ II-VI semiconductor materials ♦ Conductivity ♦ Temperature sensors ♦ Cobalt ♦ Gas Sensing ♦ Thin films ♦ Carrier Reversal ♦ Cobalt Doping
Abstract The n to p type carrier reversal conductivity is observed in cobalt doped zinc oxide (Co_ZnO) thin films with cobalt content from 0.001 to 0.5 wt% in hydrogen (H2) gas. Maximum response (220.6 %) and p-type conductivity is achieved in H2 gas at lower operating temperature (200oC) using 0.01 wt% Co_ZnO thin film where n-type conductivity is observed at higher operating temperatures which provide selective H2 sensing. The n and p type conductivity are observed at 250oC but the response (%) is less. Below 250oC it shows fully p-type conductivity in presence of H2 gas. By decreasing operating temperature, O2" molecular oxygen ions might be dominant to chemi-adsorb and creates OH" on sensor surface by reacting with H2 gas which increase the sensor resistance and shows p-type conductivity. The effect of interstitial defects and oxygen vacancies are also studied for n to p carrier reversal using photo luminescence spectra of undoped and Co_ZnO thin films.
Description Author affiliation: Electron. & Commun. Eng., S'O'A Univ., Bhubaneswar, India (Bannerjee, R.) || Mater. Sci. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India (Ghosh, A.; Majumder, S.B.)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-11-01
Publisher Place South Korea
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781479982035
Size (in Bytes) 1.16 MB
Page Count 4
Starting Page 1
Ending Page 4


Source: IEEE Xplore Digital Library