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Author Beniakar, M. ♦ Sargentis, C. ♦ Xanthakis, J.P. ♦ Anastassopoulos, A. ♦ Kladas, A. ♦ Tsamakis, D.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Nonvolatile memory ♦ Nanoparticles ♦ Nanocrystals ♦ Voltage ♦ Hafnium oxide ♦ Tunneling ♦ Electrons ♦ Educational institutions ♦ Writing ♦ Platinum
Abstract Despite the technological maturity of non-volatile memories (NVMs) embedded with metal or semiconductor nanoparticles (NPs) there is still considerable controversy over their discharging behaviour when the writing voltage is removed. Exponential [1,2] and logarithmic [3,4] discharge laws coexist in the literature.
Description Author affiliation: Electrical Engineering, National Technical University of Athens, Zografou, Greece (Beniakar, M.; Sargentis, C.; Xanthakis, J.P.; Anastassopoulos, A.; Kladas, A.; Tsamakis, D.)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 171.98 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library