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Author Dobrescu, L. ♦ Brezeanu, A. ♦ Rusu, A. ♦ Ionescu, A.M.
Sponsorship IEEE-Electron Devices Soc.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Equations ♦ Threshold voltage ♦ Parameter extraction ♦ Electronic mail ♦ Paper technology ♦ Semiconductor device modeling ♦ MOSFETs ♦ Low voltage ♦ Convergence ♦ Robustness
Abstract This paper presents a new approach to investigate the limit between the subthreshold and strong inversion regions in the EKV model based on the Nonlinear Electrical Conduction Theorem that involves calculations of the drain-current derivatives. The main advantage is the simultaneous extraction of the threshold voltage, V/sub T/ and of the limit current, I/sub s/, between subthreshold and strong inversion regions. The proposed method is validated on ultra short channel MOSFET's.
Description Author affiliation: Politehnic Univ. of Bucharest, Romania (Dobrescu, L.)
ISBN 0780366662
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-10-09
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 267.82 kB
Page Count 4
Starting Page 421
Ending Page 424

Source: IEEE Xplore Digital Library