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Author Li-Jung Liu ♦ Kuei-Shu Chang-Liao ♦ Wen-Chun Keng ♦ Tien-Ko Wang
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon germanium ♦ Germanium silicon alloys ♦ Tunneling ♦ Educational institutions ♦ Flash memory ♦ Systems engineering and theory ♦ Nonvolatile memory ♦ High K dielectric materials ♦ High-K gate dielectrics ♦ MOS capacitors
Abstract SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operation characteristics of charge-trapping (CT) flash devices were studied in this work. The programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. The retention properties of CT flash devices are satisfactory with suitable Ge content in SiGe buried channel and thickness of Si-cap layer.
Description Author affiliation: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, R.O.C. (Li-Jung Liu; Kuei-Shu Chang-Liao; Wen-Chun Keng; Tien-Ko Wang)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 215.69 kB
Page Count 2
Starting Page 1
Ending Page 2


Source: IEEE Xplore Digital Library