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Author Gajula, D.R. ♦ McNeill, D.W. ♦ Coss, B.E. ♦ Dong, H. ♦ Jandhyala, S. ♦ Kim, J. ♦ Wallace, R.M. ♦ Armstrong, B.M.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Nickel ♦ Germanium ♦ MOSFET circuits ♦ X-ray scattering ♦ Annealing ♦ Scanning electron microscopy ♦ Fabrication
Abstract Germanium is of unique interest for CMOS technology because of its high electron and hole mobilities compared with those of its counterpart silicon [1]. Significant progress has been in germanium p-MOSFETs, while in n-MOSFETS there are some hindrances. The diffusivity and poor activation of dopants in Ge [2] will not allow the formation of shallow junctions and low resistivity source and drain regions in Ge MOSFETs. Implantless fabrication with nickel germanide Schottky source and drain contacts is an alternative approach to fabricate Ge p-MOSFETs. S. Zhu et al [3] demonstrated the fabrication of nickel germanide based p-MOSFETs. D. R. Gajula et al [4] showed the effect of RTA temperature on the Schottky barrier height (Ф) of nickel germanides on Ge and observed Ф of 0.6–0.7 eV for RTA at approximately 300 °C. So the barrier height for holes (Ф = E) is nearly zero, which is suitable for Schottky based p-MOSFETs. Electrical characterization of NiGe/Ge diodes was used to measure the Schottky barrier height. Surface characterization of these nickel germanides is very important in optimizing the fabrication of germanide based Ge p-MOSFETs. In this work, we show the surface characterization of nickel germanides formed on germanium with different RTA treatments by using SEM, XRD and XPS techniques.
Description Author affiliation: University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas, 75080 (Coss, B.E.; Dong, H.; Jandhyala, S.; Kim, J.; Wallace, R.M.) || School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, United Kingdom (Gajula, D.R.; McNeill, D.W.; Armstrong, B.M.)
ISBN 9781457717550
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717567
Size (in Bytes) 772.13 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library