Thumbnail
Access Restriction
Subscribed

Author Wettimuny, R. ♦ Cheng, M.-C.
Sponsorship IEEE
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Circuit simulation ♦ Equations ♦ Thermal resistance ♦ Silicon ♦ Temperature ♦ Thermal conductivity ♦ Computational modeling ♦ Substrates ♦ Semiconductor process modeling ♦ Integrated circuit interconnections
Abstract This paper presents a simple methodology that combines 2D device simulation with the thermal circuit model to simulate the self-heating in SOIs. Depending on the use of either drift-diffusion (DD) or energy balance (EB) equations, results based on the simplified approaches show a time saving of 25-90% over the rigorous heat flow (HF) model which consists of the energy balance equations and heat flow equation. A 2D device simulator, S-PISCES, was used to demonstrate the approaches.
Description Author affiliation: Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA (Wettimuny, R.)
ISBN 0780374320
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-12-05
Publisher Place USA
Rights Holder ISDRS-Univ of Maryland
Size (in Bytes) 292.62 kB
Page Count 4
Starting Page 126
Ending Page 129


Source: IEEE Xplore Digital Library