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Author Kong Liang ♦ Zhang Jin ♦ Qiu Zhijie ♦ Meng Jinlei
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2013
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics
Subject Keyword Insulated gate bipolar transistors ♦ Logic gates ♦ Equivalent circuits ♦ Layout ♦ Switches ♦ Inductance ♦ Integrated circuits
Abstract The current sharing of the chips in parallel is one of the key points of the layout design of IGBT module. The current imbalance of the chips leads to imbalance losses and temperature, and increases the failure of the chip with highest temperature, so attention should be paid during the IGBT module design. In this paper, the asymmetric stray parameters of the circuit in parallel and the coupling between the gate circuit and the power circuit are analyzed by the equivalent circuit method, but the simulation results and the experimental results show that the stray inductances and resistances, extracted at the fixed frequency, can't reflect the electrical behaviors of the power and gate circuit. A method to extract the stray parameters is proposed in this paper, which can be used to reflect the current imbalance of the switching and conducting behaviors.
Description Author affiliation: Key Lab. of Power Electron. & Electr. Drive, Inst. of Electr. Eng., Beijing, China (Kong Liang; Zhang Jin; Qiu Zhijie; Meng Jinlei)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2013-10-26
Publisher Place South Korea
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781479914470
Size (in Bytes) 1.81 MB
Page Count 6
Starting Page 1851
Ending Page 1856

Source: IEEE Xplore Digital Library