Thumbnail
Access Restriction
Subscribed

Author Yanqing Deng ♦ Ytterdal, T. ♦ Fjeldly, T.A. ♦ Shur, M.S.
Sponsorship IEEE ♦ Electron Device Soc. ♦ Nat. Sci. Found. ♦ Army Research Laboratory ♦ Naval Research Laboratory ♦ Army Research Office ♦ Nat. Inst. of Standards and Technol. ♦ Elec. and Comput. Eng. Dept., Univ. of Maryland
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword SPICE ♦ MOSFETs ♦ Gamma rays ♦ Circuit simulation ♦ Space vector pulse width modulation ♦ Annealing ♦ Degradation ♦ Temperature ♦ FETs ♦ Radiation effects
Abstract A SPICE device model for vertical power MOSFETs has been developed for simulating the degradation effects caused by gamma radiation on electrical performance. The total dose radiation effects and dynamic effects associated with radiation flux variations and annealing have been modeled and incorporated into the device model. The model is implemented into the circuit simulator AIM-SPICE. Our pre-radiation model shows excellent agreement with experimental data of IRF 130 and NTE2392 VDMOS. The simulation results for the total dose and transient radiation quantitatively and predictively show the degradation of device performance.
ISBN 0780381394
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-12-10
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 82.10 kB
Page Count 2
Starting Page 138
Ending Page 139


Source: IEEE Xplore Digital Library