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Author Gaska, R.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Light emitting diodes ♦ Phonons ♦ Semiconductor device reliability ♦ Optical reflection ♦ Optical device fabrication
Abstract III-Nitride semiconductor-based Deep UV (DUV) LEDs are emerging as an enabling technology for diverse military, homeland security, industrial and commercial markets and space exploration. Current technology allows to fabricate AlGaN-based DUV LEDs with wall-plug efficiency (WPE) between 1–2%, which is substantially lower that WPE for visible and near UV LEDs. Significant R&D efforts are under way, including DARPA's “Compact Mid-Ultraviolet Technology” (CMUVT) program, to improve materials quality, device fabrication and light extraction to increase WPE of DUV LEDs by more than order of magnitude.
Description Author affiliation: Sensor Electronic Technology, Inc., USA (Gaska, R.)
ISBN 9781457717550
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717567
Size (in Bytes) 94.09 kB
Page Count 1
Starting Page 1
Ending Page 1


Source: IEEE Xplore Digital Library