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Author Yazawa, K. ♦ Kendig, D. ♦ Weng Hong Lai ♦ Shakouri, A.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2014
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Electrostatic discharges ♦ Heating ♦ Transient analysis ♦ Thyristors ♦ Fingers ♦ Light emitting diodes ♦ Imaging ♦ thermoreflectance ♦ ESD ♦ thermal imaging
Abstract Electrostatic discharge (ESD) protection devices are critical in preventing static charge from damaging integrated circuit (IC) chips. Due to the high speed nature of the ESD event, however, thermal characteristics have been hard to capture or characterize. We investigated the use of the transient thermoreflectance imaging method to characterize the temperature distribution in a time series of thermal maps with 100 ns resolution. We reviewed the high speed transient thermoreflectance method and then demonstrated practical examples of thermal characterization for an ESD diode, a snapback Grounded-Gate n-type Field Effect Transistor (GGNFET), and a silicon-controlled rectifier (SCR). Unique transient thermal characteristics were identified in microsecond time scale. The initial current flow pattern can be identified before heat is diffused in the whole device. In the GGNFET device, current concentration at the corners of the anode and cathode are identified. In the SCR device, inhomogeneous heating in two fingers was observed with a 300 ns time scale, which is an indication of an unstable current flow in the device.
Description Author affiliation: Microsanj, LLC, Santa Clara, CA, USA (Yazawa, K.; Kendig, D.) || Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA (Shakouri, A.) || Test Inc. Asia Pte Ltd., Singapore, Singapore (Weng Hong Lai)
ISBN 9781479943746
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-03-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 965.03 kB
Page Count 4
Starting Page 90
Ending Page 93

Source: IEEE Xplore Digital Library