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Author Koley, G.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2005
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Gallium nitride ♦ Nanoscale devices ♦ Schottky barriers ♦ Substrates ♦ FETs ♦ Temperature ♦ Conductivity ♦ Application software ♦ Costs ♦ Optical device fabrication
Abstract III-nitride based semiconductors have been under intense research focus in recent years largely due to their electronic and optoelectronic applications. In comparison to large area devices, III-nitride nanowire based devices provide unique opportunity to dramatically improve device efficiency and scope of integration, as well as, reduce device cost. In this talk, the author present the growth, device fabrication, and electrical and structural characterization of GaN nanowires (20 nm typical diameter) grown by direct reaction between metallic Ga and ammonia. GaN nanowires were grown on $SiO_{2}$ covered doped Si substrates using Ni catalyst, and metal contacts (stack of Ti/Al/Mo/Au) were deposited at the two ends (nominally 4 micron apart) using a novel pre-aligned nanowire growth and fabrication process, to fabricate backgated FETs with the Si substrate as gate terminal
Description Author affiliation: Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC (Koley, G.)
ISBN 142440083X
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2005-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 366.78 kB
Page Count 2
Starting Page 26
Ending Page 27


Source: IEEE Xplore Digital Library