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Author Hackbarth, T. ♦ Herzog, H.-J. ♦ Hieber, K.-H. ♦ Konig, U. ♦ Mantl, S. ♦ Hollander, B. ♦ St Lenk ♦ von Kanel, H.
Sponsorship IEEE ♦ Electron Device Soc. ♦ Nat. Sci. Found. ♦ Army Research Laboratory ♦ Naval Research Laboratory ♦ Army Research Office ♦ Nat. Inst. of Standards and Technol. ♦ Elec. and Comput. Eng. Dept., Univ. of Maryland
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword FETs ♦ Silicon germanium ♦ Germanium silicon alloys ♦ Helium ♦ Radio frequency ♦ Substrates ♦ Capacitive sensors ♦ MODFETs ♦ HEMTs ♦ Molecular beam epitaxial growth
Abstract In this work, MODFET layer stacks with a Ge fraction x=33% were grown by molecular beam epitaxy on thin virtual substrate (VS). A method has been developed to produce thin SRB (strain relieved buffer) SiGe layers (100-200 nm) using He implantation and subsequent annealing (750-900 /spl deg/C) to relax the strain of a pseudomorphic SiGe layer. The degree of relaxation was measured by high resolution X-ray diffraction. To assess the impact of self-heating, the output characteristics were recorded with an ACCENT Diva D225 system in the static and in the pulsed mode with 200 ns pulses at a duty cycle of 1:1000. The difference in the I/V curve between the static and the pulsed mode is much larger for the thick VS indicating enhanced self-heating. Finally, RF measurements up to 50 GHz were carried out on the two VS versions.
Description Author affiliation: Res. & Technol., DaimlerChrysler AG, Ulm, Germany (Hackbarth, T.; Herzog, H.-J.; Hieber, K.-H.; Konig, U.)
ISBN 0780381394
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-12-10
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 131.22 kB
Page Count 2
Starting Page 53
Ending Page 54

Source: IEEE Xplore Digital Library