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Author Werheit, H.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Thermoelectricity ♦ Solids ♦ Boron ♦ Temperature ♦ Thigh ♦ Doping ♦ Charge carrier processes ♦ Physics ♦ Bonding ♦ Inorganic materials
Abstract The thermoelectric properties of beta-rhombohedral boron and boron carbide, the best-investigated icosahedral boron-rich solids, are reviewed. Because of its high density of gap states $(~10^{21}$ cm $^{-3})$ generated by intrinsic defects, p-type boron carbide behaves electronically extrinsic up to at least 2000 K, and therefore it exhibits excellent thermoelectric performance. This can even be considerably improved by suitable interstitial doping (Si, Al). As the possibility of n-doping of boron carbide can be largely excluded, other n-type counterparts are required for technical application. Some alkaline hexaborides (Takeda et al.) and rare-earth boron carbonitrides (Mori et al.) are shown to be promising candidates to close this gap
Description Author affiliation: Inst. of Phys., Duisburg-Essen Univ., Duisburg (Werheit, H.)
ISBN 1424408105
ISSN 10942734
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-08-06
Publisher Place Austria
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 677.35 kB
Page Count 5
Starting Page 159
Ending Page 163

Source: IEEE Xplore Digital Library