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Author Sunier, R. ♦ Monajemi, P. ♦ Ayazi, F. ♦ Vancura, T. ♦ Baltes, H. ♦ Brand, O.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Insulation ♦ Micromechanical devices ♦ Spinning ♦ Magnetic sensors ♦ Wet etching ♦ Fabrication ♦ Voltage ♦ Silicon on insulator technology ♦ Diodes ♦ Linearity
Abstract Vertical Hall sensors have been fabricated using a new process combining deep-RIE silicon trench etching and anisotropic TMAH silicon wet etching to precisely define the sensor's active area. The demonstrated release of the bottom of the devices with a wet etching step results in a well-defined and uniformly doped active area. The trench-defined vertical Hall sensors show a very high current related sensitivity of up to 1000 V/AT, a non-linearity of 0.06% FSO, and a residual offset (after spinning current offset reduction) of about 0.5 mT. A method for etching the polysilicon inside the trenches using XeF/sub 2/ without an additional mask is demonstrated on an SOI wafer. While the technology is demonstrated for vertical Hall sensors, it is also well suited for the fabrication and release of trench-defined MEMS, such as thin beams.
Description Author affiliation: Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland (Sunier, R.)
ISBN 0780386922
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-10-24
Publisher Place Austria
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 0.97 MB
Page Count 4
Starting Page 1442
Ending Page 1445


Source: IEEE Xplore Digital Library