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Author Banu, V. ♦ Godignon, P. ♦ Jorda, X. ♦ Alexandru, M. ♦ Millan, J.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Schottky diodes ♦ Silicon carbide ♦ Surges ♦ Temperature measurement ♦ Temperature ♦ SPICE
Abstract This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300ºC.
Description Author affiliation: IMB-CNM (CSIC), Barcelona, Catalonia, Spain (Banu, V.; Godignon, P.; Jorda, X.; Alexandru, M.; Millan, J.)
ISBN 9781467307376
ISSN 1545857X
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-10-15
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781467307383
Size (in Bytes) 755.04 kB
Page Count 4
Starting Page 359
Ending Page 362


Source: IEEE Xplore Digital Library