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Author Trajin, B. ♦ Vidal, P.-E. ♦ Viven, J.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Insulated gate bipolar transistors ♦ Silicon carbide ♦ Switching loss ♦ Switches ♦ Power losses ♦ Silicon ♦ Semiconductor diodes ♦ Thermal model ♦ Assembly ♦ Chopper converter
Abstract This study deals with new integrated systems for power electronic applications including wide-band gap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectives such as higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study the electro-thermal behaviour of an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of local heat sources due to Joule effect and compact thermal model of the assembly are proposed to predict local temperature of power electronic components.
Description Author affiliation: LGP, Univ. de Toulouse, Tarbes, France (Trajin, B.; Vidal, P.-E.; Viven, J.)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-09-08
Publisher Place Switzerland
Rights Holder EPE Association and IEEE
e-ISBN 9789075815221
Size (in Bytes) 258.29 kB
Page Count 9
Starting Page 1
Ending Page 9

Source: IEEE Xplore Digital Library