Access Restriction

Author Gnani, E. ♦ Reggiani, S. ♦ Gnudi, A. ♦ Baccarani, G.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Solid modeling ♦ Computational modeling ♦ Electric potential ♦ Semiconductor process modeling ♦ Impurities ♦ Numerical models ♦ Neodymium
Abstract In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.
Description Author affiliation: ARCES, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy (Gnani, E.; Reggiani, S.; Gnudi, A.; Baccarani, G.)
ISBN 9781457717550
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717567
Size (in Bytes) 2.52 MB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library