Access Restriction

Author Borruel, L. ♦ Sujecki, S. ♦ Auzanneau, S.C. ♦ Sumpf, B. ♦ Moreno, P. ♦ Wykes, J. ♦ Krakowski, M. ♦ Erbert, G. ♦ Rodriguez, D. ♦ Sewell, P. ♦ Calligaro, M. ♦ Wenzel, H. ♦ Benson, T.M. ♦ Larkins, E.C. ♦ Esquivias, I.
Sponsorship IEEE Lasers & Electro-Opt. Soc
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Brightness ♦ Numerical analysis ♦ Power lasers ♦ Optical resonators ♦ Geometrical optics ♦ Optical refraction ♦ Optical variables control ♦ Laser beams ♦ Fiber lasers ♦ Semiconductor lasers
Abstract The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.
Description Author affiliation: Dpto.Tecnol. Fotonica, Univ. Politecnica de Madrid, Spain (Borruel, L.)
ISBN 078037598X
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-09-29
Publisher Place Germany
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 148.27 kB
Page Count 2
Starting Page 89
Ending Page 90

Source: IEEE Xplore Digital Library