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Author Eliza, S.A. ♦ Islam, S.K. ♦ Lee, I. ♦ Greenbaum, E. ♦ Ericson, M.N. ♦ Khan, M.A.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Chemicals ♦ HEMTs ♦ MODFETs ♦ Energy capture ♦ Voltage ♦ Aluminum gallium nitride ♦ Gallium nitride ♦ Throughput ♦ Testing ♦ Photodiodes
Abstract This paper presents for the first time a micro-sensor for detecting Photosystem I (PS I) reaction centers. In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers, Photosystems I and II (PS I and PS II). Photon capture triggers rapid charge separation and the conversion of light energy into an electric voltage across the nanometer-scale (~6 nm) reaction centers. AlGaN/GaN based high electron mobility transistors (HEMTs) show high current throughputs and greater sensitivity to surface charges. PS I molecules were chemically immobilized on the HEMT device and significant changes in the transistor characteristics were noticed. With zero gate bias and 5 V at drain terminal, drain current changes by about 5 mA for 6muL drop of PS I solution. The difference between light and dark measurements is ~0.8 mA. Test results demonstrate that this approach is a potential candidate for detection and characterization of biomolecular photodiodes -PS I reaction centers.
Description Author affiliation: Tennessee Univ., Knoxville (Eliza, S.A.; Islam, S.K.)
ISBN 9781424412617
ISSN 19300395
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-10-28
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 318.57 kB
Page Count 4
Starting Page 1456
Ending Page 1459

Source: IEEE Xplore Digital Library