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Author Tackhwi Lee ♦ Se Jong Rhee ♦ Chang Yong Kang ♦ Feng Zhu ♦ Manhong Zhang ♦ Hyoung-sub Kim ♦ Changhwan Choi ♦ Injo Ok ♦ Sergei Koveshnikov ♦ Hokyung Park ♦ Lee, J.C.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword MOSFET circuits ♦ Dielectrics ♦ Hafnium oxide ♦ Leakage current ♦ Electric variables ♦ Electron mobility ♦ Electron traps ♦ Electrodes ♦ Phonons ♦ Scattering
Abstract New structural approach of Dy2O3 incorporated HfO2 multi-metal oxide n-MOSFETs and their electrical characterization are investigated for the first time. Top Dy2O3 laminated HfO2 bi-layer structure shows the thinnest EOT with reduced leakage current compared to control HfO2. Improved electrical characteristics such as lower VT, higher drive current and channel electron mobility are demonstrated. In addition, better VT instabilities, reduced dielectric charge trapping, and less Ta penetration from TaN metal gate electrode are obtained in Dy2O3/HfO2 structure. Finally, reduced phonon scattering is found to be the plausible mechanism for higher channel mobility.
Description Author affiliation: Intel Corporation, Santa Clara, CA (Sergei Koveshnikov) || GIST, Gwangju, KOREA (Hokyung Park) || Microelectronics Research Center, The Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758. Tel: (512)471-1627, Fax: (512)471-5652, Email: tack0@mail.utexas.edu (Tackhwi Lee) || Microelectronics Research Center, The Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758 (Se Jong Rhee; Chang Yong Kang; Feng Zhu; Manhong Zhang; Hyoung-sub Kim; Changhwan Choi; Injo Ok; Lee, J.C.)
ISBN 0780397487
ISSN 15483770
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-06-26
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 2.58 MB
Page Count 2
Starting Page 69
Ending Page 70


Source: IEEE Xplore Digital Library