Access Restriction

Author Ting-En Hsieh ♦ Lu-Che Huang ♦ Yueh-Chin Lin ♦ Chia-Hua Chang ♦ Huan-Chung Wang ♦ Chang, E.Y.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword HEMTs ♦ MODFETs ♦ Gallium nitride ♦ Aluminum gallium nitride ♦ Logic gates ♦ Lithography ♦ Silicon
Abstract In this work, AlGaN/GaN HEMTs with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The method is simple of cost effective. The 0.6 × $100μm^{2}$ slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance higher than 200 mS/mm and a breakdown voltage higher than 100 V. Through high-frequency measurements, the device revealed a current gain cut-off frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz.
Description Author affiliation: National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. Department of Materials Science and Engineering (Ting-En Hsieh; Lu-Che Huang; Yueh-Chin Lin; Chia-Hua Chang; Huan-Chung Wang; Chang, E.Y.)
ISBN 9781467323956
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-09-19
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781467323963
Size (in Bytes) 328.03 kB
Page Count 3
Starting Page 744
Ending Page 746

Source: IEEE Xplore Digital Library