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Author Seonghyun Kim ♦ Minseok Jo ♦ Seungjae Jung ♦ Hyejung Choi ♦ Joonmyoung Lee ♦ Man Chang ♦ Chunhum Cho ♦ Hyunsang Hwang
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword MOSFET circuits ♦ Silicon ♦ Annealing ♦ Hydrogen ♦ Nanoscale devices ♦ CMOS technology ♦ CMOS process ♦ Power MOSFET ♦ Materials science and technology ♦ Interface states
Abstract Recently, silicon nanowire (Si NW) devices have attracted as promising candidates for next CMOS application, because of better short channel immunity, high performance and low power consumption.[1,2] In order to improve the device performance, Si NW devices with fin-shape multi channels structure have been reported.[3] However, Si NW structure has many defect sites at the interface state between Si/SiO dielectric layer.[4] These Si/SiO interface defects cause detrimental effects on electrical chararcteristics of Si NW devices.[5] In this work, we investigated effects of high pressure hydrogen annealing (HPHA)[6] to improve the device performance of Si NW MOSFET devices with multi channels on SOI wafer using top down method which may be more compatible to CMOS process.
Description Author affiliation: Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 1 Oryong Dong, Buk-gu, Gwangju 500-712, Korea (Seonghyun Kim; Minseok Jo; Seungjae Jung; Hyejung Choi; Joonmyoung Lee; Man Chang; Chunhum Cho; Hyunsang Hwang)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 271.73 kB
Page Count 2
Starting Page 1
Ending Page 2


Source: IEEE Xplore Digital Library