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Author Wang Cailin ♦ Gao Yong
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Anodes ♦ Thyristors ♦ Voltage ♦ Power semiconductor devices ♦ Insulated gate bipolar transistors ♦ Buffer layers ♦ Electron emission ♦ Power semiconductor switches ♦ Spontaneous emission
Abstract The current transport of transparent emitter is analysed in detail theoretically and the expression of the electron current density at the transparent anode is deduced. In addition, the switching characteristic of the gate commutated thyristor (GCT) device with transparent anode structure is simulated by using MEDICI simulator, and compared with the gate turn-off thyristor (GTO) device with conventional anode structure. The result shows that the theoretical analysis for the transparent emitter is reasonable. Based on theoretical analysis, the mechanism of the transparent emitter is revealed. The result provides an important design basis for the devices with the transparent emitter.
Description Author affiliation: Dept. of Electron. Eng., Xi'an Univ. of Technol., China (Wang Cailin; Gao Yong)
ISBN 0780384997
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-10-04
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 270.06 kB
Page Count 4
Starting Page 359
Ending Page 362


Source: IEEE Xplore Digital Library