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Author Il'chenko, V.V. ♦ Kravchenko, A.I. ♦ Telega, V.V. ♦ Chehun, V.P. ♦ Gaskov, A.M. ♦ Grinchenko, V.T.
Sponsorship IEEE Sensors Council
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Frequency dependence ♦ Voltage ♦ Current measurement ♦ Semiconductor thin films ♦ Semiconductor diodes ♦ Frequency measurement ♦ Sensor phenomena and characterization ♦ Sputtering ♦ Frequency modulation ♦ Signal analysis
Abstract The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
Description Author affiliation: Dept. of Radiophys., Kiev Univ., Ukraine (Il'chenko, V.V.; Kravchenko, A.I.; Telega, V.V.; Chehun, V.P.)
ISBN 0780381335
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-10-22
Publisher Place Canada
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 132.50 kB
Page Count 2
Starting Page 137
Ending Page 138


Source: IEEE Xplore Digital Library