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Author Yahya, I. ♦ Stolojan, V. ♦ Clowes, S. ♦ Mustaza, S.M. ♦ Silva, S.R.P.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2010
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword CNTFETs ♦ Carbon nanotubes ♦ Semiconductivity ♦ Fabrication ♦ Chemical vapor deposition ♦ FETs ♦ Doping ♦ Electric breakdown ♦ Semiconductor device breakdown ♦ Chemical processes
Abstract Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, I, were $10^{2}$ and $10^{5}$ for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.
Description Author affiliation: Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom (Stolojan, V.; Clowes, S.; Silva, S.R.P.) || Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia (Yahya, I.; Mustaza, S.M.)
ISBN 9781424466085
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-06-28
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781424466092
Size (in Bytes) 1.84 MB
Page Count 5
Starting Page 224
Ending Page 228


Source: IEEE Xplore Digital Library