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Author Khanduri, G.M. ♦ Panwar, B.S.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Doping profiles ♦ Silicon germanium ♦ Germanium silicon alloys ♦ Heterojunction bipolar transistors ♦ Double heterojunction bipolar transistors ♦ Cutoff frequency ♦ Electrons ♦ Performance gain ♦ Bipolar transistors ♦ Performance analysis
Abstract The current gain and cut-off frequency performance in NPN Si/SiGe/Si double-heterojunction bipolar transistors (SiGe DHBTs) with two different base doping profiles (N/sub B/) has been analyzed. The simulation results for conventional uniform-N/sub B/ SiGe DHBT are compared with the proposed SiGe drift-DHBT (DrDHBT) having N/sub B/-ramp, while base Gummel number is kept constant in both the devices. The N/sub B/ ramp is controlled such that it minimizes the decelerating field component and a net accelerating field in quasi-neutral base of DrDHBT for minority electrons could be achieved. This increases the drift component of electron current in the quasi-neutral base, which gives rise to an increased current gain and improved cut-off frequency in DrDHBT depending on the value of drift-field parameter. Therefore, an optimized base doping profile could be implemented in place of uniform base doping for further improvement over uniform-N/sub B/ SiGe DHBTs.
Description Author affiliation: Centre for Appl. Res. in Electron., Indian Inst. of Technol. Delhi, New Delhi, India (Khanduri, G.M.; Panwar, B.S.)
ISBN 0780386582
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-12-07
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 712.99 kB

Source: IEEE Xplore Digital Library