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Author Avram, M. ♦ Brezeanu, G. ♦ Iliescu, C. ♦ Neagoe, O.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon carbide ♦ MOSFET circuits ♦ Power MOSFET ♦ Insulated gate bipolar transistors ♦ Electron emission ♦ Conductivity ♦ Power dissipation ♦ Substrates ♦ Semiconductor materials ♦ Voltage
Abstract A comparative study on high voltage MOSFET and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. This work presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/=-80 V), with a specific on-resistance as low as 13 mW/cm/sup 2/, 100-200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.
Description Author affiliation: Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania (Avram, M.)
ISBN 0780384997
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-10-04
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 328.40 kB
Page Count 4
Starting Page 303
Ending Page 306

Source: IEEE Xplore Digital Library