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Author Jang, J.-H. ♦ Cueva, G. ♦ Dumka, D.C. ♦ Hoke, W.E. ♦ Lemonias, P.J. ♦ Adesida, I.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2000
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword PIN photodiodes ♦ Indium phosphide ♦ Gallium arsenide ♦ HEMTs ♦ MODFETs ♦ Photodetectors ♦ Costs ♦ Optical device fabrication ♦ Integrated optoelectronics ♦ Circuits
Abstract InP-based heterostructures have traditionally been used for the fabrication of photodetectors and integrated optoelectronic circuits (OEICs) operating at long wavelength (1.55 /spl mu/m) for optical fiber applications. Specifically, In/sub 0.53/Ga/sub 0.47/As lattice-matched (LM) to InP is used for the absorption region in a photodetector and for the active channel in electronic devices. Recent advances in heteroepitaxy have resulted in the growth of high quality metamorphic (MM) In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As layers on GaAs substrates using thick graded InAlGaAs buffer layers (Hoke et al, 1999). This push for metamorphic layers is being driven by the lower cost, robustness, and the mature processing technologies enjoyed by GaAs over InP. High performance high electron mobility transistors (HEMTs) with short gate lengths fabricated on GaAs MM layers have demonstrated record bandwidths (Dumka et al, 1999) similar to LM HEMTs on InP. In order to achieve lower cost, ultra-high speed (>20 Gb/s) OEICs, it is imperative to investigate the performance of optoelectronic devices such as p-i-n photodiodes in MM structures. In this paper, we report a comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures. Results on dark currents, DC, and RF responses are presented.
Description Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA (Jang, J.-H.)
ISBN 0780364724
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2000-06-19
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 163.98 kB
Page Count 2
Starting Page 173
Ending Page 174

Source: IEEE Xplore Digital Library