Access Restriction

Author Smowton, P.M. ♦ Sandall, I.C. ♦ Thomson, J.D. ♦ Badcock, T. ♦ Mowbray, D.J. ♦ Jin, C.-Y. ♦ Liu, H.-Y. ♦ Hopkinson, M.
Sponsorship : IEEE LEO
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Quantum dot lasers ♦ Radiative recombination ♦ Temperature dependence ♦ US Department of Transportation ♦ Threshold current ♦ Current measurement ♦ Laser theory ♦ Extraterrestrial measurements ♦ Gallium arsenide ♦ Temperature distribution
Abstract We measure the temperature dependence of the components of threshold current of 1300 nm undoped and p-doped quantum-dot-lasers and show that the temperature dependence of gain is the largest factor in producing the observed negative $T_{0}$
Description Author affiliation: Sch. of Phys. & Astron., Cardiff Univ. (Smowton, P.M.; Sandall, I.C.; Thomson, J.D.)
ISBN 0780395603
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-09-18
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 229.84 kB
Page Count 2
Starting Page 155
Ending Page 156

Source: IEEE Xplore Digital Library