Access Restriction

Author Compton, D.N. ♦ Leitch, A.W.R. ♦ Neethling, J.H. ♦ Kozyrkov, V.V.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1996
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Transistors ♦ Annealing ♦ Substrates ♦ Tin ♦ Scanning electron microscopy ♦ Nickel ♦ Thermoelectricity ♦ Temperature ♦ Sputtering ♦ Intermetallic
Abstract This paper reports on a structural investigation of the ternary compound TiNiSn, prepared as a thin film by electron beam deposition of a sandwich structure comprising individual layers of Ti, Ni and Sn. The effect of annealing the compound at 800/spl deg/C for times up to 72 hours was investigated. X-ray diffraction revealed the formation of TiNi/sub 2/Sn after 6 hours of annealing. The excess of Ni in the deposited structure (confirmed by EDS) resulted in the first phase of TiNiSn not being present and a shift in the lattice parameter of second phase TiNi/sub 2/Sn.
Description Author affiliation: Dept. of Phys., Port Elizabeth Univ., South Africa (Compton, D.N.)
ISBN 0780332210
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1996-03-26
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 253.26 kB
Page Count 3
Starting Page 491
Ending Page 493

Source: IEEE Xplore Digital Library