Access Restriction

Author Ha, H.P. ♦ Hyun, D.B. ♦ Yoo, B.C. ♦ Kolomoets, N.V. ♦ Shim, J.D.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1999
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Bismuth ♦ Tellurium ♦ Solids ♦ Temperature ♦ Alloying ♦ Powders ♦ Thermoelectricity ♦ Pressing ♦ Thermal conductivity ♦ Extraterrestrial measurements
Abstract Solid solutions of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ pseudo-binary system were mechanically alloyed, cold pressed and then sintered at different temperatures between 250/spl deg/C and 380/spl deg/C. By sintering specimens for several hours in evacuated ampoules, the equilibrium thermoelectric properties were obtained. Significant differences in thermoelectric properties were found between the sintered materials and the single crystals grown by the conventional solidification processes. Besides the well known composition of Bi/sub 2/Te/sub 2/Se, singular properties were found at the composition of Bi/sub 2/TeSe/sub 2/. In the Bi/sub 2/Se/sub 3/ rich region, the thermal conductivity at room temperature showed unusual behaviour. The most plausible explanation for such phenomena appeared to be the inversion of conduction and valence zones. Detailed examination of the temperature dependence of the electrical conductivity confirmed this explanation.
Description Author affiliation: Metals Process. Res. Centre, Korea Inst. of Sci. & Technol., Seoul, South Korea (Ha, H.P.)
ISBN 0780354516
ISSN 10942734
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1999-08-29
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 358.73 kB
Page Count 4
Starting Page 363
Ending Page 366

Source: IEEE Xplore Digital Library