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Author Conway, A.M. ♦ Sturm, B.W. ♦ Voss, L.F. ♦ Beck, P.R. ♦ Graff, R.T. ♦ Nikolic, R.J. ♦ Nelson, A.J. ♦ Payne, S.A.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Amorphous semiconductors ♦ Gamma ray detection ♦ Gamma ray detectors ♦ Leakage current ♦ Amorphous materials ♦ Energy resolution ♦ Conductivity ♦ Radiation detectors ♦ Schottky barriers ♦ Crystallization
Abstract High energy resolution gamma ray detectors based on CdZnTe are needed for a variety of homeland security, nuclear nonproliferation and astronomy applications. The energy resolution of the detectors is dependent on background noise levels. This noise is often the result of leakage current through the devices, which generally operate as resistors. Because of this, increasing the resistivity of the CdZnTe has been one of the primary goals of research in these materials. However, an alternate approach to achieving similar results is to increase the effective resistivity through the use of metal Schottky contacts.[1] Researchers have also demonstrated that amorphous — crystalline semiconductor heterojunctions can improve the blocking behavior contacts for radiation detectors. [2,3] In this work, we investigate the effect of hydrogenated amorphous Si (a-Si:H) layers on oriented CdZnTe on leakage current and the gamma detection response.
Description Author affiliation: Lawrence Livermore National Lab, USA (Conway, A.M.; Sturm, B.W.; Voss, L.F.; Beck, P.R.; Graff, R.T.; Nikolic, R.J.; Nelson, A.J.; Payne, S.A.)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 174.93 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library