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Author Saadeh, O.S. ♦ Mantooth, H.A. ♦ Balda, J.C. ♦ Agarwal, A.K. ♦ Kashyap, A.S.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2008
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Mathematical model ♦ Equations ♦ Integrated circuit modeling ♦ Thyristors ♦ Silicon carbide ♦ Logic gates ♦ Junctions
Abstract The U.S. electric grid is moving down a path of modernization and SiC-based thyristor devices may play a role in that transformation. This paper reports two primary contributions - (a) accurate physics based modeling and characterization of a SiC p-type thyristor, and (b) developing and codifying a generalized parameter extraction strategy for the Lumped-Charge modeling method, making it feasible to apply this technique for any bipolar device - beyond the thyristor. The level-3 physics based model incorporating SiC material and device geometry is highly accurate, replicating device capacitances, lifetimes, and non-quasi-static effects present in the actual device. A 1 kV/36 A p-type SiC thyristor provided by Cree was used to validate the model. Special test jigs were also designed and used to fully characterize the dc and transient performance of the device, ensuring precise measurements and safety of the user.
Description Author affiliation: Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR (Saadeh, O.S.; Mantooth, H.A.; Balda, J.C.)
ISBN 9781424416677
ISSN 02759306
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2008-06-15
Publisher Place Greece
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 185.15 kB
Page Count 6
Starting Page 1092
Ending Page 1097

Source: IEEE Xplore Digital Library