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Author Lee, D.S. ♦ Steckl, A.J. ♦ Hommerich, U. ♦ Nyein, E.E. ♦ Rack, P. ♦ Fitzgerald, J. ♦ Zavada, J.M.
Sponsorship IEEE ♦ Electron Device Soc. ♦ Nat. Sci. Found. ♦ Army Research Laboratory ♦ Naval Research Laboratory ♦ Army Research Office ♦ Nat. Inst. of Standards and Technol. ♦ Elec. and Comput. Eng. Dept., Univ. of Maryland
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Electroluminescent devices ♦ Transistors ♦ Sun
Abstract In this paper, we report on the growth of in-situ Tm-doped Al/sub x/Ga/sub 1-x/N films and the corresponding effect of Al composition on the EL emission. PL and CL show almost same trend as EL with various Al compositions. The 465-nm emission is barely present at x=0.16, it becomes very clear for x/spl ges/0.39, and it dominates for x/spl ges/0.81. The EL emission at 802 nm experienced the opposite trend, decreasing with Al composition. We have confirmed that blue EL emission becomes dominant over IR emission with increasing Al composition in the Al/sub x/Ga/sub 1-x/N host.
Description Author affiliation: Nanoelectron. Lab., Cincinnati Univ., OH, USA (Lee, D.S.; Steckl, A.J.)
ISBN 0780381394
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-12-10
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 92.41 kB
Page Count 2
Starting Page 5
Ending Page 6


Source: IEEE Xplore Digital Library