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Author Espejo, G. ♦ Meriuts, A. ♦ Titov, O.Yu. ♦ Logvinov, G.N. ♦ Volovichev, I.N. ♦ Gurevich, Yu.G.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1999
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Thermoelectricity ♦ Charge carriers ♦ Charge carrier processes ♦ Radiative recombination ♦ Spontaneous emission ♦ Circuits ♦ Instruments ♦ Temperature ♦ Electric resistance ♦ Thermal resistance
Abstract The new point of view of thermoelectric phenomena as a linear transport process of nonequilibrium charge carriers is presented. It is shown that Fermi quasilevels, which characterize transport in a system far from equilibrium can be nonmonotonic functions of the spatial coordinates. The role of recombination in affecting the thermoelectric phenomena is discussed for the first time. It is shown that in the presence of thermal fields there appear new terms in the expression for recombination which depend on the inhomogeneity of temperature. If electron and hole temperatures are different, which is a typical case in semiconductors, there appears one more new term in the expression for recombination which is proportional to the difference of electron and hole temperatures.
Description Author affiliation: Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico (Espejo, G.)
ISBN 0780354516
ISSN 10942734
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1999-08-29
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 269.84 kB
Page Count 3
Starting Page 598
Ending Page 600

Source: IEEE Xplore Digital Library