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Author Hsu, B.-C. ♦ Liu, W.T. ♦ Lin, C.-H. ♦ Liu, C.W.
Sponsorship IEEE
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Photodetectors ♦ Tunneling ♦ MOS devices ♦ Detectors ♦ Voltage ♦ Photoconductivity ♦ Electrons ♦ Semiconductor diodes ♦ Schottky diodes ♦ P-i-n diodes
Abstract Metal/oxide/Si structures with ultrathin gate oxide are utilized as photodetectors. At inversion gate bias, the dark current and photocurrent are determined by both the minority carrier generation rate in the deep depletion region and the electrons tunneling from the gate electrode to n-type Si in a PMOS detector, while only the former component is significant in the NMOS photodetector. The electron tunneling current dominates the photocurrent at sufficiently large negative gate voltage, and the sensitivity of PMOS detectors is, therefore, enhanced by approximately one order of magnitude, as compared to NMOS detectors.
Description Author affiliation: Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Hsu, B.-C.)
ISBN 0780374320
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-12-05
Publisher Place USA
Rights Holder ISDRS-Univ of Maryland
Size (in Bytes) 240.84 kB
Page Count 4
Starting Page 42
Ending Page 45

Source: IEEE Xplore Digital Library