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Author Hashim, U. ♦ Ayub, R.M.
Sponsorship Mems Technol.(M) Sdn, Bhd ♦ Kriptic Devices (M) Sdn Bhd ♦ IEEE Electron Devices Soc
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Glass ♦ Electron emission ♦ Scanning electron microscopy ♦ Thermal stresses ♦ Dielectric materials ♦ Surface cracks ♦ Surface topography ♦ Planarization ♦ Silicon compounds ♦ Temperature
Abstract Spin on Glass (SOG), an interlayer dielectric material applied in inorganic liquid form to fill narrow gaps in the subdielectric surface for planarization, is an alternative to silicon dioxide using CVD processes and CMP processes. SOG has similar electrical properties with SiO/sub 2/ as an intermetal dielectric layer. In this experiment the main features looked for are cracking, gaps, conformity and smoothness. In this respect, an experiment was setup and three different SOG process schemes were investigated. The first and the third scheme executed were using the same SOG process procedure but the SOG liquid was spun on at two different speed, 2600 and 700 rpm respectively. Whereby the second scheme again followed the same SOG process procedure as the first scheme but repeated three times for thicker SOG. The result obtained indicated that the Spin on Glass process was optimized using the third scheme and the results achieved are no cracks, no gaps and smooth features. Slow ramping rate couple with single SOG process was found to be the best scheme for SOG to smoothness the topography of the intermetal dielectric. In this scheme, SOG was spun on at the speed of 700 rpm and the sequence of the temperature treatment was 80/spl deg/C, 150/spl deg/C and 250/spl deg/C using hotplate on the SOG machine and 400/spl deg/C using vertical furnace. The result revealed that SOG spin speed at 2600 rpm was too high for SOG to adequately fill the gaps. Multiple SOG process to increase the thickness is not possible due to the cracking that occurs because of the thermal stress.
Description Author affiliation: MIMOS Semicond., Kuala Lumpur, Malaysia (Hashim, U.; Ayub, R.M.)
ISBN 0780375785
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-12-19
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 529.81 kB
Page Count 5
Starting Page 485
Ending Page 489

Source: IEEE Xplore Digital Library