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Author Tzu-Min Ou ♦ Borsa, T. ♦ Van Zeghbroeck, B.
Sponsorship IEEE Electron Devices Soc.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Logic gates ♦ Doping ♦ Gold ♦ Dielectrics ♦ Graphene ♦ Transistors ♦ High K dielectric materials
Abstract Summary form only given. Graphene is known for its high carrier mobility and high saturation velocity . The majority of graphene transistors in the literature-including MOSFETs, barristors, and tunneling FETs-have a gate separated from the channel by a conventional or high-K dielectric layer. In this paper we demonstrate for the first time a lateral graphene FET gated by a graphene/semiconductor heterojunction. The device consists of a p-type graphene channel and an n-type semiconductor gate. Since no metal/dielectric-stacked gate is used, the device is referred to as graphene junction FET (G-JFET). Such a device is of interest as an alternate to G-MOSFETs, or as a back gate for G-MOSFETs with the feature that the device's Dirac voltage $(V_{Dirac})$ can be tuned by the doping density of semiconductor gate. This G-JFET device demonstrates for the first time the feasibility of using a graphene/n-semiconductor Schottky junction as the gate mechanism to control the conductivity of a graphene channel. The Schottky-junction back gate of a G-JFET also provides an additional degree of freedom to tune the $V_{Dirac}$ of each individual transistor by doping specific regions underneath the graphene channel.
Description Author affiliation: Dept. of Electr., Comput., & Energy Eng., Univ. of Colorado - Boulder, Boulder, CO, USA (Tzu-Min Ou; Borsa, T.; Van Zeghbroeck, B.)
ISBN 9781467381345
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-06-21
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781467381352
Size (in Bytes) 1.46 MB
Page Count 2
Starting Page 139
Ending Page 140

Source: IEEE Xplore Digital Library