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Author Junsangsri, P. ♦ Jie Han ♦ Lombardi, F.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2014
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Resistance ♦ Phase change materials ♦ Accuracy ♦ Programming ♦ Gaussian distribution ♦ Fault tolerance ♦ Fault tolerant systems ♦ Resistance drift ♦ Phase Change Memory (PCM) ♦ Multilevel ♦ Tolerance
Abstract This paper presents a system-level scheme to alleviate the effect of resistance drift in a multilevel phase change memory (PCM) for data integrity. In this paper, novel criteria of separation of the PCM resistance for multilevel cell storage and selection of the threshold resistances between levels are proposed by using a median based method based on a row of PCM cells as reference. The threshold resistances found by the proposed scheme drift with time, thus providing an efficient and viable approach when the number of levels increases. A detailed analysis of the proposed level separation and threshold resistance selection is pursued. The impact of different parameters (such as the write region and the number of cell in a row) is assessed with respect to the generation of the percentage accuracy. The proposed approach results in a substantial improvement in performance compared with existing schemes found in the technical literature.
Description Author affiliation: Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA (Junsangsri, P.; Jie Han; Lombardi, F.)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-10-01
Publisher Place Netherlands
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781479961559
Size (in Bytes) 481.89 kB
Page Count 6
Starting Page 63
Ending Page 68

Source: IEEE Xplore Digital Library