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Author Ruther, P. ♦ Bartholomeyczik, J. ♦ Buhmann, A. ♦ Paul, O.
Sponsorship IEEE Sensors Council
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Hafnium ♦ Temperature ♦ Resonance ♦ Resonant frequency ♦ Fabrication ♦ Silicon ♦ Electrodes ♦ Analytical models ♦ Transducers ♦ Gold
Abstract This paper reports on the characterization of electromechanical high frequency resonators realized using a novel SOI-based low temperature fabrication process. Key features of the devices are single crystal silicon resonant beams, 200 nm to 600 nm thin transducer gaps, and gold electrodes. The fabrication process combines bulk silicon micromachining applying deep reactive ion etching, low temperature deposition of a thin sacrificial oxide and electroplating of the lateral electrodes. The resonant behavior of devices with resonance frequencies f/sub res/ between 420 kHz and 4.11 MHz was characterized as a function of the bias voltage V/sub bias/ applied to the beam. Measurements were performed at ambient pressures p between 5/spl times/10/sup -5/ mbar and 0.5 mbar. Q values up to 52,000 at f/sub res/=420 kHz and 6,000 at f/sub res/=4.11 MHz were obtained. The interaction of resonator and measurement setup were simulated using an electrical network simulation program combined with a finite element analysis using ANSYS/sup /spl reg//.
Description Author affiliation: Inst. of Microsystem Technol., Freiburg Univ., Germany (Ruther, P.; Bartholomeyczik, J.; Buhmann, A.; Paul, O.)
ISBN 0780381335
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-10-22
Publisher Place Canada
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 426.27 kB
Page Count 5
Starting Page 820
Ending Page 824


Source: IEEE Xplore Digital Library